View SKW30N6008_4716283.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

skw30n60 1 rev. 2_2 sep 08 fast igbt in npt-technolog y with soft, fast recovery anti-parallel emcon diode ? 75% lower e off compared to previous generation combined with low conduction losses ? short circuit withstand time ? 10 s ? designed for: - motor controls - inverter ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability ? very soft, fast recovery anti-parallel emcon diode ? pb-free lead plating; rohs compliant ? qualified according to jedec 1 for target applications ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ) t j marking package skw30n60 600v 30a 2.5v 150 c k30n60 pg-to-247-3 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 41 30 pulsed collector current, t p limited by t jmax i cpuls 112 turn off safe operating area v ce 600v, t j 150 c - 112 diode forward current t c = 25 c t c = 100 c i f 41 30 diode pulsed current, t p limited by t jmax i fpuls 112 a gate-emitter voltage v ge 20 v short circuit withstand time 2 v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 250 w soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s t s 260 c operating junction and storage temperature t j , t stg -55...+150 c 1 j-std-020 and jesd-022 2 allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-247-3
skw30n60 2 rev. 2_2 sep 08 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.5 diode thermal resistance, junction ? case r thjcd 1 thermal resistance, junction ? ambient r thja 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =30a t j =25 c t j =150 c 1.7 - 2.1 2.5 2.4 3.0 diode forward voltage v f v ge =0v, i f =30a t j =25 c t j =150 c 1.2 - 1.4 1.25 1.8 1.65 gate-emitter threshold voltage v ge(th) i c =700 a, v ce = v ge 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 40 3000 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =30a - 20 - s dynamic characteristic input capacitance c iss - 1600 1920 output capacitance c oss - 150 180 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 92 110 pf gate charge q gate v cc =480v, i c =30a v ge =15v - 140 182 nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c - 300 - a 1) allowed number of short circuits: <1 000; time between short circuits: >1s.
skw30n60 3 rev. 2_2 sep 08 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 44 53 rise time t r - 34 40 turn-off delay time t d(off) - 291 349 fall time t f - 58 70 ns turn-on energy e on - 0.64 0.77 turn-off energy e off - 0.65 0.85 total switching energy e ts t j =25 c, v cc =400v, i c =30a, v ge =0/15v, r g =11 ? , l 1) =180nh, c 1) =900pf energy losses include ?tail? and diode reverse recovery. - 1.29 1.62 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 400 32 368 - - - ns diode reverse recovery charge q rr - 610 - nc diode peak reverse recovery current i rrm - 5.5 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =200v, i f =30a, di f /dt =200a/ s - 180 - a/ s switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 44 53 rise time t r - 34 40 turn-off delay time t d(off) - 324 389 fall time t f - 67 80 ns turn-on energy e on - 0.98 1.18 turn-off energy e off - 0.92 1.19 total switching energy e ts t j =150 c v cc =400v, i c =30a, v ge =0/15v, r g = 11 ? , l 1) =180nh, c 1) =900pf energy losses include ?tail? and diode reverse recovery. - 1.90 2.38 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 520 56 464 - - - ns diode reverse recovery charge q rr - 1740 - nc diode peak reverse recovery current i rrm - 9.0 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =150 c v r =200v, i f =30a, di f /dt =200a/ s - 200 - a/ s 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e.
skw30n60 4 rev. 2_2 sep 08 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 20a 40a 60a 80a 100a 120a 140a 160a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100a dc 1ms 200 s 50 s 15 s t p =4 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 11 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 0w 50w 100w 150w 200w 250w 300w i c , collector current 25c 50c 75c 100c 125c 0a 10a 20a 30a 40a 50a 60a limited by bond wire t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
skw30n60 5 rev. 2_2 sep 08 i c , collector current 0v 1v 2v 3v 4v 5v 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a 15v 13v 11v 9v 7v 5v v ge =20v i c , collector current 0v 1v 2v 3v 4v 5v 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a 15v 13v 11v 9v 7v 5v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a 100a -55c +150c t j =+25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 1.0v 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v) i c = 30a i c = 60a
skw30n60 6 rev. 2_2 sep 08 t , switching times 10a 20a 30a 40a 50a 60a 10ns 100ns 1000ns t r t d(on) t f t d(off) t , switching times 0 ? 10 ? 20 ? 30 ? 40 ? 10ns 100ns 1000ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 11 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 30a, dynamic test circuit in figure e) t , switching times 0c 50c 100c 150c 10ns 100ns 1000ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v 5.0v 5.5v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 30a, r g = 11 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.7ma)
skw30n60 7 rev. 2_2 sep 08 e , switching energy losses 10a 20a 30a 40a 50a 60a 70a 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj 3.0mj 3.5mj 4.0mj 4.5mj 5.0mj e on * e off e ts * e , switching energy losses 0 ? 10 ? 20 ? 30 ? 40 ? 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj 3.0mj 3.5mj 4.0mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 11 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 30a, dynamic test circuit in figure e) e , switching energy losses 0c 50c 100c 150c 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj 3.0mj e ts * e on * e off z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10 -4 k/w 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t j , junction temperature t p , pulse width figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 30a, r g = 11 ? , dynamic test circuit in figure e) figure 16. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. c 1 = 1 / r 1 r 1 r 2 c 2 = 2 / r 2 r ,(1/w) , (s) 0.3681 0.0555 0.0938 1.26*10 -3 0.0380 1.49*10 -4
skw30n60 8 rev. 2_2 sep 08 v ge , gate - emitter voltage 0nc 50nc 100nc 150nc 200nc 0v 5v 10v 15v 20v 25v 480v 120v c , capacitance 0v 10v 20v 30v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c = 30a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 15v 0 s 5 s 10 s 15 s 20 s 25 i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 20v 0a 50a 100a 150a 200a 250a 300a 350a 400a 450a 500 a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce = 600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of gate-emitter voltage ( v ce 600v, t j = 150 c)
skw30n60 9 rev. 2_2 sep 08 t rr , reverse recovery time 100a/ s300a/ s500a/ s700a/ s900a/ s 0ns 100ns 200ns 300ns 400ns 500ns 600ns 700ns i f = 15a i f = 30a i f = 60a q rr , reverse recovery charge 100a/ s300a/ s 500a/ s 700a/ s 900a/ s 0nc 500nc 1000nc 1500nc 2000nc 2500nc 3000nc 3500nc i f = 15a i f = 30a i f = 60a di f /dt , diode current slope di f /dt , diode current slope figure 21. typical reverse recovery time as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) figure 22. typical reverse recovery charge as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) i rr , reverse recovery current 100a/ s 300a/ s 500a/ s 700a/ s 900a/ s 0a 4a 8a 12a 16a 20a 24a i f = 15a i f = 60a i f = 30a di rr /dt , diode peak rate of fall of reverse recovery current 100a/ s 300a/ s 500a/ s700a/ s900a/ s 0a/ s 200a/ s 400a/ s 600a/ s 800a/ s 1000a/ s di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) figure 24. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e)
skw30n60 10 rev. 2_2 sep 08 i f , forward current 0.0v 0.5v 1.0v 1.5v 2.0v 0a 10a 20a 30a 40a 50a 60 a 150c -55c 25c 100c v f , forward voltage -40c 0c 40c 80c 120c 1.0v 1.5v 2.0v v f , forward voltage t j , junction temperature figure 25. typical diode forward current as a function of forward voltage figure 26. typical diode forward voltage as a function of junction temperature z thjcd , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width figure 27. diode transient thermal impedance as a function of pulse width ( d = t p / t ) i f = 30a i f = 60 a c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(1/w) , (s) 0.270 0.157 0.231 2.08*10 -2 0.221 2.29*10 -3 0.203 2.04*10 -4 0.070 1.03*10 -5
skw30n60 11 rev. 2_2 sep 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 3 min 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 max 2.16 0.027 0.214 3 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 min max 0.095 0.203 0.099 0.052 0.083 0.085 0 7.5mm 5 5 0 17-12-2007 03 z8b00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 m m pg-to247-3
skw30n60 12 rev. 2_2 sep 08 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i, v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =180nh a nd stray capacity c =900pf. published by infineon technologies ag ,
skw30n60 13 rev. 2_2 sep 08 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the devic e, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may co ntain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered.

▲Up To Search▲

Price & Availability of SKW30N6008

	To Download SKW30N6008 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .